Method of burning in a semiconductor device

Details Method of burning in a semiconductor device Method of burning in a semiconductor device

1992-08-10

1994-03-15

Reynolds, Bruce A.

Electric heating

Heating devices

Combined with diverse-type art device

324 731, 324158R, G01R 3100

Patent

active

052947769

ABSTRACT:
Since the power-supply and/or signal-transmission wiring layers connected to the semiconductor chip regions are formed, each individual integrated circuit can be burned in on the semiconductor wafer and, in other words, an integrated circuit can be burned in on a wafer level. The integrated circuit can thus be burned in at the end of a wafer process. An assembled semiconductor device is subjected to a high temperature or a high humidity, for checking the reliability of the assembled device.

REFERENCES:
patent: 3781683 (1973-12-01), Freed
patent: 3849872 (1974-11-01), Hubacher
patent: 4038648 (1977-07-01), Chesley
patent: 4281449 (1981-08-01), Ports et al.
patent: 4413271 (1983-11-01), Gontowski, Jr. et al.
patent: 4479088 (1984-10-01), Stopper
patent: 4812742 (1989-03-01), Abel et al.
patent: 5059899 (1991-10-01), Farnworth et al.
patent: 5070296 (1991-12-01), Pricke
IBM Tech. Disclosure Bulletin, vol. 35, No. 6, Nov. 1992 "Chip Burn-In Accomplished at the Wafer Level".
IBM Tech. Disclosure Bulletin, vol. 25, No. 7B, Dec. 1982, "Self-Heating Test Chip for Reliability Life Test".
IBM Tech. Disclosure Bulletin, vol. 14, No. 6, Nov. 1971, "Self-Contained Chip Heater".

Affiliated with

Also associated with

Rating

Method of burning in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of burning in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of burning in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1537443