Method of boron doping silicon bodies

Details Method of boron doping silicon bodies Method of boron doping silicon bodies

1979-08-20

1981-02-10

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148189, H01L 21225

Patent

active

042499704

ABSTRACT:
An open diffusion method of doping a silicon body with boron. In a first open diffusion heating step, a boron glass is deposited upon the silicon body with a silicon-rich boron phase (SiB.sub.6) formed beneath the glass where deposition is directly on silicon. The boron glass and SiB.sub.6 layer are formed by exposing the silicon body to a gas mixture containing a predetermined boron quantity and boron and oxygen in a predetermined quantitative ratio. Etching steps then permit the removal of the boron glass without deleteriously affecting the SiB.sub.6 layer or underlying silicon, or uncontrollably affecting any SiO.sub.2 masking layers. In a second heating step, at least a part of the boron from the SiB.sub.6 layer is driven into the silicon in an inert or oxidizing atmosphere.

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