Method of boron diffusion into semiconductor wafers having reduc

Details Method of boron diffusion into semiconductor wafers having reduc Method of boron diffusion into semiconductor wafers having reduc

1991-07-26

1992-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437949, 437950, 148DIG37, H01L 21225

Patent

active

051717085

ABSTRACT:
A method of diffusing boron into semiconductor wafers is disclosed which essentially includes boron deposition and boron diffusion. The deposition is performed from 900.degree. to 1,000.degree. C. and the diffusion at a temperature of 890.degree. to 1000.degree. C. Oxidation induced stacking faults are greatly reduced.

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patent: 4791074 (1988-12-01), Tsunashima et al.
Greig et al., "Method of Making Semiconductor Devices", RCA Technical Notes, TN No. 891, 6-71.
Ghandhi, S. K., "VLSI Fabrication Principles", pp. 165-167, 1983.
Solid State Technology, vol. 27, No. 10, Oct. 1984, Washington, US, pp. 153-159; B. H. Justice et al: "A Novel Boron Spin-On Dopand".
RCA Review, vol. 28, No. 2, Jun. 1967, "Princeton US", pp. 344-350; N. Goldsmith et al: Boron Nitride As A Diffusion Source For Silicon p. 346, paragraph 4-p. 347, last paragraph.

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