Method of bonding semiconductor substrates

Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor

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1562739, 156281, 437921, 437974, 437225, 148DIG12, 148DIG159, 148DIG135, H01L 2120, H01L 2102

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active

053839935

ABSTRACT:
In a method of bonding semiconductor substrates, a plurality of the semiconductor substrates are first prepared. Surfaces of the semiconductor substrates are mirror-polished. The mirror-polished surface of at least one of the semiconductor substrates is then provided with a hydrophilic property in such a way that an oxide layer is formed on the mirror-polished surface by exposing the mirror-polished surface to an atmosphere of at least one of an oxygen ion and an oxygen radical. A water molecule is then adhered to the mirror-polished surface. The semiconductor substrates then contact with each other through the mirror-polished surface. The contacted semiconductor substrates are then heated. According to such a method of bonding, the semiconductor substrates are strongly bonded to each other with hardly an unbonded region even if the semiconductor substrates are heated at a low temperature.

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Lasky, J. B., "Wafer Bonding for Silicon-on-Insulator Technologies", Appl. Phys. Lett. 48(1), 6 Jan. 1986, pp. 78-80.

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