Method of bonding semiconductor material to an aluminum foil

Details Method of bonding semiconductor material to an aluminum foil Method of bonding semiconductor material to an aluminum foil

1988-09-26

1989-10-10

Beck, Shrive

Metal fusion bonding

Process

Plural joints

437 2, 437 4, 437 74, 427 74, H01L 3118

Patent

active

048726079

ABSTRACT:
The disclosure relates to a method of bonding semiconductor material to aluminum foil to provide electrical connection therebetween wherein the foil and/or the semiconductor material may have an oxide coating thereon. The method comprises heating the foil to a temperature in the range of from about 500.degree. C. to about 577.degree. C. and then moving the semiconductor into said foil under impact to expose elemental aluminum and semiconductor material at the point of impact and form a bond therebetween at the point of impact.

REFERENCES:
patent: 3998659 (1976-12-01), Wakefield
patent: 4021323 (1977-05-01), Kilby
patent: 4173494 (1979-11-01), Johnson
patent: 4407320 (1983-10-01), Levine
patent: 4451968 (1984-06-01), Jensen
patent: 4514580 (1985-04-01), Bartlett
patent: 4521640 (1985-06-01), Levine

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