Method of bonding and bonding apparatus for a semiconductor...

Details Method of bonding and bonding apparatus for a semiconductor... Method of bonding and bonding apparatus for a semiconductor...

2006-12-19

2006-12-19

Johnson, Jonathan (Department: 1725)

Metal fusion bonding

Process

Using high frequency vibratory energy

C228S001100, C156S580100

Reexamination Certificate

active

07150388

ABSTRACT:
A method of bonding and a bonding apparatus for a semiconductor chip uses ultrasonic vibration but can improve the bonds between electrode terminals of a semiconductor chip and a substrate. In a method of bonding a semiconductor chip that places electrode terminals of the semiconductor chip and electrode terminals of a substrate in contact and applies ultrasonic vibration to the semiconductor chip to bond the electrode terminals of the semiconductor chip and the substrate together, the ultrasonic vibration is compressional waves that are transmitted to the semiconductor chip and is set so that a half-wavelength of the ultrasonic vibration is a length given by multiplying a gap between adjacent electrode terminals in a direction of the compressional waves by a reciprocal of a natural number, and maximum amplitude points are located at positions of the respective electrode terminals of the semiconductor chip and the substrate.

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