Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-03-02
2010-06-08
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S107000, C257S459000, C257SE23020, C257SE23040, C257SE23088, C257SE21499, C257SE21705
Reexamination Certificate
active
07732300
ABSTRACT:
A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al0.83Cu0.17alloy without having an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.
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Abdelaziez Yasser A
Garber Charles D
Kile Goekjian Reed & McManus
Park Jae Y.
Siliconfile Technologies Inc.
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