Method of biaxially aligning crystalline material

Plastic and nonmetallic article shaping or treating: processes – Direct application of electrical or wave energy to work – Producing or treating magnetic product precursor thereof

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C264S435000, C427S547000, C505S400000

Reexamination Certificate

active

06399011

ABSTRACT:

FIELD OF INVENTION
The invention comprises a method of inducting biaxial particulate alignment in a body of crystalline particles possessing anisotropic magnetic susceptibility, such as high temperature superconducting material.
BACKGROUND
Many High-T
c
Superconducting Cuprates (HTSC) are known to have superconducting transition temperatures, T
c
exceeding the temperature at which liquid nitrogen boil, 77K. As such they have a potentially large number of applications ranging from power generation, distribution, transformation and control, to high-field magnets, motors, body scanners, telecommunication and electronics. A high T
c
value alone does not guarantee the utility of these HTSC at 77K or higher temperatures. Often these applications require large critical currents in the HTSC and this is not achieved unless the crystalline grains or particles of the HTSC are crystallographically aligned. This is commonly achieved in thin-films wherein the HTSC material is deposited on a substrate in such as way as to obtain crystallographic alignment of the material. However, thin film, while supporting very high critical current densities, J
c
do not carry a very high absolute critical current, I
c
because they are so thin.
Superconducting wires or other components which use bulk superconducting material can in principle support much higher I
c
values provided they can be textured to achieve high J
c
values. In processing HTSC to for such wires or similar, aligning the crystalline particles of the HTSC so that a major portion or ore of the particles have at least one similar axis parallel such as the c-axis, is commonly referred to as texturing the material. It has become apparent, at least for some and probably all HTSC, that crystallographic alignment along one common axis or monoaxial texture, may be insufficient to achieve high critical current density and the full biaxial texture in which two similar axes of the crystalline particles, such as the c- and b-axes, are aligned is preferable. An example of monoaxial texture of HTSC achieved by magnetic means is given by Tkaczyk and Lay (J. Mater. Res. 5 (1990) 1368) in which no significant improvement over unaligned material was seen.
It is known that such biaxial texturing or alignment can be achieved by linear melt processing in which the HTSC material is pulled slowly through a temperature gradient so that part of the material resides above the partial melting point and another part lies below, and the melt/solid interface is slowly displaced along the length of the material leaving behind dense, textured material in its path. This process, however, is difficult to control and extremely slow, producing biaxially textured material at a rate as low as 1 mm/hour. Linear melt processing is considered unsuitable for manufacturing long length wires exceeding 100 m or, worse still, 1 km.
Efforts have also been made to produce biaxial texture by a combination of monoaxial magnetic alignment and mechanical treatments such as pressing or rolling (Chen et al, Appl. Phys. Lett. 58 (1991) 531). However, the difficulty of achieving bulk alignment by mechanical means has prevented significant gains in critical current from being demonstrated.
SUMMARY OF INVENTION
The invention provides an improved or at least alternative method of inducing biaxial particulate alignment in a body of crystalline particles processing anisotropic magnetic susceptibility, such as high temperature superconducting material, which is useful as a step in forming bulk HTSC components such as wires, tapes, or other conducting elements, or other components.
In broad terms the invention comprises a method inducing biaxial particulate alignment in a body of crystalline particles having anisotropic magnetic susceptibility, so that at least a major portion of the crystalline particles have at least two crystalline axes generally parallel, comprising subjecting the particles to a magnetic field which varies cyclically relative to the body of crystalline particles with time and which has an average magnitude which is a maximum in a first direction, lower in a second generally orthogonal direction, and a minimum or zero in a third direction generally orthogonal to the first and second directions, to induce alignment of the axis of maximum magnetic susceptibility of the particles with the field direction of maximum average magnitude and the axis of minimum magnetic susceptibility with the field direction of minimum or zero average magnitude.
In one for of the invention a time varying magnetic field relative to the crystalline particles is produced by causing cycles of relative rotation between the body of crystalline particles and a magnetic field with the crystalline particles being subjected to the magnetic field in one orientation between the body of crystalline particles and the magnetic field for a time longer than the crystalline particles are subjected to the magnetic field in a second such orientation. The body of crystalline particles may be rotated relative to a magnetic field or the magnetic field may be rotated relative to the crystalline particles.
The relative may be cyclical between two positions with, in each cycle, the time at one position being less than the time at the other position. The angle of relative rotation may be between 0° and 180° and is preferably about 90°. Alternatively the relative rotation may be cyclical between three positions. The body of particles may be rotated within a magnetic field, between one position in which the body of particles spends most time so that the direction of the magnetic field relative to the particles in this position defines the direction of maximum average field magnitude relative to the particles, and two positions on either side of the maximum magnitude position, in which the particles spend less time. In these positions the angle of the field relative to the maximum average magnitude field direction may be between 0° and 180° and is preferably about 90°. For example biaxial alignment may be induced by cyclically rotating a body of particles about an axis first by 90° with respect to an initial orientation in which the body of particles spends most time. The body of particles is then returned to the initial position and then rotated by 90° in the opposite direction, and is then returned to the initial position and the cycle is repeated. The total time spend at the opposite positons (±90°) is less than the time spent at the initial position so that the field direction when the body of particles is in the initial position defines the direction of the maximum average field magnitude relative to the particles. The average field magnitude along an axis parallel to the +90° and −90° positions is lower and the crystalline axis of intermediate magnetic susceptibility of the particles will tend to align along tis axis. The sign reversal of the magnetic field at opposite positions is unimportant for the aligning process as the potential energy of a body in a magnetic field of strength B varies as B
2
. Initial alignment may be accomplished by holding the body of crystalline particles in the maximum average magnitude position to induce an initial alignment of the crystals with their axis of maximum magnetic susceptibility along this field direction.
In another form of the invention the time varying magnetic field may be a net magnetic field which is the sum of a field in one direction and a field in a second direction, the strength of which field in the second direction varies with time. The direction of the first field relative to the crystalline particles (when the second field is switched off or at a minimum) will generally be the field direction of maximum average magnitude and the crystalline axis of maximum magnetic susceptibility will align in this direction. When the second field is switched on or at a maximum, it adds to the field in the first direction and the direction orthogonal to both the first and second fields is the direction of minimum average magnetic field magnitude, with which the axi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of biaxially aligning crystalline material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of biaxially aligning crystalline material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of biaxially aligning crystalline material will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2977942

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.