Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Patent
1996-10-30
1998-07-07
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
330277, 330289, H03F 130
Patent
active
057775184
ABSTRACT:
A MOSFET amplifier device is biased to exhibit a substantially constant transconductance over a range of variations in power supply, temperature and process. A bias circuit includes a pair of MOS field effect devices, one of which is biased in a triode operating region with a constant reference drain-to-source terminal voltage and with a constant first reference drain-to-source terminal current. The other field effect device is biased in saturation by a circuit that derives a gate-to-source terminal bias voltage from the gate terminal voltage of the first device and the first reference voltage. A second reference current flows into the drain terminal of the second device, and a corresponding bias current is derived, for example, by mirroring the second reference current. The mirrored reference current is used to bias a MOS amplifier device, to maintain a substantially constant transconductance over the mentioned range of variations.
REFERENCES:
patent: 4484089 (1984-11-01), Viswanathan
patent: 4697153 (1987-09-01), Lish
P. Siniscalchi et al,"High-Precision, Programmable, 1-10 MHz Bandwidth, 0-20dB Gain Communication Channel", IEEE 1996 Custom Integrated Circuits Conference, p. 87.
Course notes--"Practical Aspects of Analog and Mixed-Mode IC Design", pp. 19-21 (John/Martin 1995).
Lucent Technologies - Inc.
Mullins James B.
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