Method of beryllium implantation in germanium substrate

Details Method of beryllium implantation in germanium substrate Method of beryllium implantation in germanium substrate

1980-09-15

1983-11-15

Roy, Upendra

Metal treatment

Compositions

Heat treating

148172, 148187, 357 61, 357 63, 357 91, H01L 21263

Patent

active

044153708

ABSTRACT:
A semiconductor device, and a method for manufacturing it in which ions of beryllium are implanted into a germanium substrate to form a layer containing p-type impurity material. There after the substrate is heated at a temperature in the range of 400.degree. C. to 700.degree. C. to diffuse the beryllium ions into the substrate so that the concentration of beryllium at the surface of the impurity layer is in the order of 10.sup.17 cm.sup.-3 or more. In one embodiment, a p-type channel stopper is formed locally in a p-type germanium substrate and an n-type active layer is formed in a region surrounded by, and isolated from, the channel stopper region. In another embodiment, a relatively shallow p-type active layer is formed at one part of an n-type germanium substrate and p-type guard ring regions are formed surrounding, and partly overlapping said p-type active layer. In a further embodiment, a p-type island region is formed at one part of an n-type germanium substrate, and an n-type region is formed within said p-type region. In these embodiments, the p-type channel stopper region, p-type guard ring regions and the p-type island region are all formed by implanting ions of beryllium into the germanium substrate.

REFERENCES:
patent: 4235651 (1980-11-01), Kamath et al.
Diffusion in Solids, B. L. Sharma, Tran-Tech, Clausthal-Zellerfeld, W. Germany, pp. 106-107, 88-89.
Axman et al., Appl. Physics, vol. 12, (1977), 173-178.
Bjorkquist et al., Radiation Effects 6, (1970), 141-148.

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