Method of base formation in a BiCMOS process

Details Method of base formation in a BiCMOS process Method of base formation in a BiCMOS process

2005-06-28

2005-06-28

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S370000, C257S378000, C257S273000, C257S526000

Reexamination Certificate

active

06911681

ABSTRACT:
Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector, an intrinsic base above the collector, shallow trench isolation regions adjacent the collector, a raised extrinsic base above the intrinsic base, a T-shaped emitter above the extrinic base, spacers adjacent the emitter, and a silicide layer that is separated from the emitter by the spacers.

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