Method of bandgap tuning of semiconductor quantum well structure

Details Method of bandgap tuning of semiconductor quantum well structure Method of bandgap tuning of semiconductor quantum well structure

1993-12-23

1995-03-07

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437105, 437107, 437126, 437129, H01L 2120

Patent

active

053957938

ABSTRACT:
A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostuctures of interest are IH-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

REFERENCES:
patent: 4511408 (1985-04-01), Holonyak et al.
patent: 4771010 (1988-09-01), Epler et al.
patent: 4871690 (1989-10-01), Holonyak et al.
patent: 5238868 (1993-08-01), Elman et al.
Elman et al. in "GaAs/AlGaAs quantum-well intermixing using shallow ion-implantation and rapid thermal annealing" in J. Appl. Phys. vol. 66, Sep. 1989, pp. 2104-2107.

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