Method of backside grinding a bumped wafer

Details Method of backside grinding a bumped wafer Method of backside grinding a bumped wafer

2007-06-26

2007-06-26

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S114000, C438S613000, C257SE21499

Reexamination Certificate

active

11019383

ABSTRACT:
A method for backside grinding a bumped wafer is disclosed. A wafer has a plurality of bumps formed on the active surface thereof. Prior to grinding the back surface of the wafer, a hot-melt adhesive layer is formed on the active surface of the wafer so as to be adhered to the active surface and cover the bumps. Also a grinding film is attached to the hot-melt adhesive layer. After grinding the back surface of the wafer, the grinding film is removed but the hot-melt adhesive layer is remained on the wafer for the following wafer-dicing step.

REFERENCES:
patent: 6656819 (2003-12-01), Sugino et al.
patent: 6794751 (2004-09-01), Kumamoto
patent: 2002/0166625 (2002-11-01), Ball et al.
patent: 2003/0001283 (2003-01-01), Takashi et al.
patent: 516116 (2003-01-01), None

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