Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Patent
1995-08-16
1997-09-16
Nguyen, Nam
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
216 27, H01L 21302
Patent
active
056680619
ABSTRACT:
An improved back cut method is provided in a dicing procedure for separating a plurality of printheads formed in a silicon wafer. The wafer has alignment fiducial marks formed within a composite wafer. Infrared light is directed into the wafer and is reflected back through the wafer from the fiducial marks. The reflected light is detected by a CCD camera mounted on a dicing saw. The fiducial coordinates are stored in memory and displayed so that the dicing saw can be aligned with regard to the alignment marks. A back cut operation is enabled so that the saw partially cuts through the composite wafer. A subsequent dicing step separates individual printheads from the wafer.
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Collins David J.
Herko Lawrence H.
Lindamood Kevin A.
Alejandro Luz
Nguyen Nam
Xerox Corporation
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