Method of automatically growing a single crystal

Details Method of automatically growing a single crystal Method of automatically growing a single crystal

1992-06-01

1997-11-25

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117 15, 117201, C30B 1520

Patent

active

056907320

ABSTRACT:
A method of automatically growing a single crystal by using a floating-zone method in which radio-frequency induction heating is utilized, wherein the shape of molten zone of a sintered rod material is judged by comparing an anode voltage in a radio-frequency oscillation tube with a radio-frequency current, or a change in the shape of molten zone is judged depending of a change in a radio-frequency current during the growth of the sintered rod material, and power for heating is controlled on the basis of the judgement.

REFERENCES:
patent: 4220839 (1980-09-01), De Leon
patent: 4292487 (1981-09-01), De Leon
patent: 4619811 (1986-10-01), Nishizawa

Affiliated with

Also associated with

Rating

Method of automatically growing a single crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of automatically growing a single crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of automatically growing a single crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2103071