Method of attacking a thin film by decomposition of a gas in a p

Details Method of attacking a thin film by decomposition of a gas in a p Method of attacking a thin film by decomposition of a gas in a p

1978-01-10

1979-01-16

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, 204298, C23C 1500

Patent

active

041348176

ABSTRACT:
In the manufacture of electronic components, a thin film is attacked by decomposition of a gas in a plasma. The thin film is mounted on a substrate which is RF biased with respect to the plasma thereby attracting fluorine ions for example which carry out the attack. This speeds the rate of attack and improves the definition of attacked portions of the substrate.

REFERENCES:
patent: 3951709 (1976-04-01), Jacob
patent: 3971684 (1976-07-01), Muto
patent: 3984301 (1976-10-01), Matsuzaki
patent: 3994793 (1976-11-01), Harvilchuck
patent: 4030967 (1977-06-01), Ingrey
Orla Christensen, Characteristics and Applications of Bias Sputtering, Solid State Technology, vol. 13, No. 12, Dec. 1970, pp. 39-45.
Christensen and Jensen, RF Biasing through Capacitive Collector to Target Coupling in RF Diode Sputtering, J. Physics, E, vol. 5, No. 1, Jan. 1972 pp. 86-90.

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