Method of assembling one-dimensional nanostructures

Semiconductor device manufacturing: process – Direct application of electrical current

Reexamination Certificate

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C438S101000, C438S017000, C257SE51004, C977S700000, C977S742000, C977S784000

Reexamination Certificate

active

11605901

ABSTRACT:
A method provides a simple yet reliable technique to assemble one-dimensional nanostructures selectively in a desired pattern for device applications. The method comprises forming a plurality of spaced apart conductive elements (12, 20) in a sequential pattern (26) on a substrate (17) and immersing the plurality of spaced apart conductive elements (12, 20) in a solution (23) comprising a plurality of one-dimensional nanostructures (22). A voltage is applied to one of the plurality of spaced apart conductive elements (12, 20) formed in the sequential pattern (26), thereby causing portions of the plurality of one-dimensional nanostructures (22) to migrate between adjacent conductive elements (12, 20) in sequence beginning with the one of the plurality of spaced apart conductive elements (12, 20) to which the voltage is applied.

REFERENCES:
patent: 6879143 (2005-04-01), Nagahara et al.
patent: 6894359 (2005-05-01), Bradley et al.
patent: 7183003 (2007-02-01), Leu et al.
patent: 2002/0119286 (2002-08-01), Chen et al.
patent: 2004/0043527 (2004-03-01), Bradley et al.
patent: 2005/0189655 (2005-09-01), Furukawa et al.
patent: 2005/0253220 (2005-11-01), Lin et al.
patent: 2006/0063318 (2006-03-01), Datta et al.
patent: 2007/0020919 (2007-01-01), Adem et al.
Hilding, Jenny, et al., Alignment of Dispersed Multiwalled Carbon Nanotubed in Low Strength AC Electricial Fields, Journal of Nanoscience and Nanotechnology, vol. 5, No. 5, May 2005.
Dittmer, S., et al. Electric field aligned growth of single-walled carbon nanotubes, Current Applied Physics 4, (2004) pp. 595,598.
Yamamoto, K., et al., Orientation and purification of carbon nanotubes using ac electrophoresis, J. Phys. D., Phys. 31 (1998) L-34-L36.
Chung, J., et al. Nanoscale gap fabrication and integration of carbon nanotubes by micromachining, Sensor and Actuators A, 104, (2003) 229-235.
Chen, C. and Zhang, Y., Manipulation of single-walled carbon nanotubes into dispersively aligned arrays between metal electrodes, Journal of Physics D: Applied Physics, 39 (2006) 172-176.
Kocabas, C., et al, Spatially Selective Guided Growth of High-Coverage Arrays and Random Networks of Single-Walled Carbon Nanotubes and Their Intefration into Electronic Devices, J.Am. Chem. Soc., 2006, 128, 4540-4541.
Heinze, S., et al. Electrostatic engineering of nanotube transistors for improved performance, Applied Physics Letter, Vo, 83, No. 34, Dec. 15, 2003, 5038-5040.
Wind, S. J., et al., Lateral Scaling in Carbon-Nanotube Field-Effect Transistors, Physical Review Letters, vol. 91, No. 5, Aug. 1, 2003, 058301-1-4.
Kocabas, C., Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors, small 2005, 1, No. 11, 1110-1116.
Huang, Yu, et al., Nanowires for integrated multicolor nanophotonics, DOI: 10.1002/smll.200400030. Small, 2005.
Lewenstein, J., et al , High-yield selective placement of carbon nanotubes on pre-patterned electrodes, Nano leters, 2002, vol. 2, No. 5, 443-446.
Nagahara et al, Directed placement of suspended carbon nanotubes for nanometer-scale assembly, American Institute of Physics, vol. 80, No. 20, May 20, 2002.

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