Semiconductor device manufacturing: process – Direct application of electrical current
Reexamination Certificate
2007-11-13
2007-11-13
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Direct application of electrical current
C438S101000, C438S017000, C257SE51004, C977S700000, C977S742000, C977S784000
Reexamination Certificate
active
11605901
ABSTRACT:
A method provides a simple yet reliable technique to assemble one-dimensional nanostructures selectively in a desired pattern for device applications. The method comprises forming a plurality of spaced apart conductive elements (12, 20) in a sequential pattern (26) on a substrate (17) and immersing the plurality of spaced apart conductive elements (12, 20) in a solution (23) comprising a plurality of one-dimensional nanostructures (22). A voltage is applied to one of the plurality of spaced apart conductive elements (12, 20) formed in the sequential pattern (26), thereby causing portions of the plurality of one-dimensional nanostructures (22) to migrate between adjacent conductive elements (12, 20) in sequence beginning with the one of the plurality of spaced apart conductive elements (12, 20) to which the voltage is applied.
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Amlani Islamshah S.
Nagahara Larry A.
Lebentritt Michael
Motorola Inc.
Mustapha Abdulfattah
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