Coating processes – Coating by vapor – gas – or smoke
Patent
1994-06-02
1995-11-07
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
427250, 4272556, C23C 1618
Patent
active
054646561
ABSTRACT:
Neutral single-source molecular organic precursors containing tetradentate tripodal chelating ligands are provided that are useful for the preparation of films chemical vapor deposition. These complexes can be generally represented by the formula ##STR1## wherein "M" is selected from the group consisting of a lanthanide, an actinide, a Group IIIA metal, a Group IIIA metalloid, a Group IVA metal, a Group IVA metalloid, a Group VA metal, a Group VA metalloid, a Group IIIB metal, a Group IVB metal, a Group VB metal, a Group VIB metal, a Group VIIB metal, and a Group VIIIB metal. The ligand "Z", when present (k=1), is selected from the group consisting of hydrogen, halide, and a group bonded to "M" through N, O, P, S, As, Si, or C. "E.sub.c " is N, P, or As, and m=0-1. When "E.sub.t " is N, P, or As, m=1. When "E.sub.t " is O, S, or Se, m=0. Each "R.sup.1 " is selected from the group consisting of hydrogen, (C.sub.1 -C.sub.20)alkyl, (C.sub.2 -C.sub.20)alkenyl, (C.sub.2 -C.sub.20)alkynyl, (C.sub.6 -C.sub.18)aryl, (C.sub.7 -C.sub.20)aralkyl, a (C.sub.5 .C.sub.18)heterocycle, and triorganosilyl. In --[C(R.sup. 2).sub.2 ].sub.n --, n=1-4, and each "R.sup.2 " is selected from the group consisting of hydrogen, alkyl, alkenyl, alkynyl, aryl, aralkyl, and a heterocycle.
REFERENCES:
patent: 3994740 (1976-11-01), Morton
patent: 4885376 (1989-12-01), Verkade
patent: 5051533 (1991-09-01), Verkade
C. C. Amato et al., "Gas Phase Decomposition of an Organometallic Chemical Vapor Deposition Precursor to AlN: [Al(CH).sub.3).sub.2 NH.sub.2 ].sub.3 ", Mat. Res. Soc. Symp. Proc., 119-124 (1990).
D. A. Atwood et al., "X-ray crystal structure of the dimethylgallium azide polymer and its use as a gallium nitride precursor", J. Organomet. Chem., 394, C6-C8 (1990).
D. C. Bradley, "Metallo-organic Compounds containing Metal-Nitrogen bonds. Part I. Some Dialkylamino-derivatives of Titanium and Zirconium", J. Chem. Soc., 3857-3861 (1960).
D. C. Bradley et al., "Novel Precursors for the Growth of III-V Semiconductors by MOVPE", J. Cryst. Growth, 75, 101-106 (1986).
T. A. Brooks et al., "Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride from 1,1,3,3,5,5-Hexamethylcyclotrisilazane and Ammonia", Thin Solid Films, 153, 521-529 (1987).
D. M.-T. Chan et al., "Trialkoxynitridomolydbenum Compounds: (RO).sub.3 Mo.tbd.N. Preparation, Structures (R.dbd.t-Bu and i-Pr), and Comparisons with a Tungsten Analogue (R.dbd.t-Bu)", Inorg. Chem., 25, 4170-4174 (1986).
H. L. M. Chang et al., "Preparation, Structure and Properties of VO.sub.x and TiO.sub.2 Thin Films by MOCVD", Mat. Res. Soc. Symp. Proc., 168, 343-348 (1990).
H. Cohen, "Mono-and trititanates of cyclic nitrilotriethylene triorganotin titanate (IV)", J. Organometal. Chem., 9, 177-179 (1967).
H. J. Cohen, "Cyclic Nitrilotriethylene Triorganosilyl Titanate (IV): `Mono-`, `Di-` and `Trititanates`", J. Organomet. Chem., 5, 413-419 (1966).
F. A. Cotton et al., Advanced Inorganic Chemistry, 4th Ed.; Wiley-Interscience, New York; pp. 737, 751, 767, 986, 1010, and 1011 (1980).
A. H. Cowley et al., "Organometallic Chemical Vapor Deposition of III/V Compound Semiconductors with Novel Organometallic Precursors", J. Am. Chem. Soc., 110, 6248-6249 (1988).
A. H. Cowley et al., "An Aluminaphosphacubane, a New Aluminum Phosphide Precursor", Angew. Chem. Int. Ed. Engl., 29, 1409-1410 (1990).
A. H. Cowley et al., "Preparation of Indium Antimonide Using a Single-Source Precursor", Chem. Mater., 2, 221-222 (1990).
A. H. Cowley et al., "III/V Precursors with P-H or As-H Bonds. A Low-Temperature Route to Gallium Arsenide and Gallium Phosphide", Organometallics, 10, 652-656 (1991).
A. H. Cowley et al., "Isopropylphosphido and Arsenido Derivatives of Gallium and Indium. Isolation of Gallium-Phosphorous and Indium-Phosphorous Dimers and Trimers", Organometallics, 10, 1635-1637 (1991).
C. C. Cummins et al., "Trigonal-Monopyramidal M.sup.III Complexes of the Type [M(N.sub.3 N)] (M.dbd.Ti, V, Cr, Mn, Fe; N.sub.3 N.dbd.[(tBuMe.sub.2 Si) NCH.sub.2 CH.sub.2 ].sub.3 N)", Angew. Chem. Int. Ed. Engl., 31, 1501-1503 (Dec. 1992).
C. C. Cummins et al., "Synthesis of Vanadium and Titanium Complexes of the Type RM[(Me.sub.3 SiNCH.sub.2 CH.sub.2).sub.3 N] (R.dbd.Cl, Alkyl) and the Structure of CIV[(Me.sub.3 SiNCH.sub.2 CH.sub.2).sub.3 N]", Organometallics, 11, 1452-1454 (Apr. 1992).
A. G. Davies et al., "The Structure and Reactions of Some Mono-Organo-Tin (IV) Compounds", J. Organomet. Chem. 39, 279-288 (1972).
B. de Ruiter et al., "Formation of Unexpected Silicon Alkoxide Isomers in a Rectangular Planar Chelating Framework", Inorg. Chem., 29, 1065-1068 (1990).
S. B. Desu et al., "Structure, Composition, and Properties of MOCVD ZrO.sub.2 Thin Films", Mat. Res. Soc. Symp. Proc., 168, 349-356 (1990).
D. D. Devore et al., "Complexes of (Arylimido)vanadium(V). Synthetic, Structural, Spectroscopic, and Theoretical Studies of V(Ntol)Cl.sub.3 and Derivatives", J. Am. Chem. Soc., 109, 7408-7416 (1987).
S. Dou et al., "Crystal structure of 2,8,9-trioxa-5-aza-1 bora.dbd.tricyclo[3.3.3.0.sup.1.5 ] undecane-3-one", Jiegou Huaxue, 2, 273-276 (1983); Chem. Abstr., 106, Abstract No. 129709z, p. 671 (1987) (Abstract Only).
H. Du et al., "Low-Temperature Metal-Organic Chemical Vapor Deposition of Silicon Nitride", J. Am. Ceram. Soc., 73, 764-766 (1990).
C. Eaborn et al., "A Silatrane-Platinum Complex, trans-[PtCl{Si(OCH.sub.2 CH.sub.2).sub.3 N}-(PMe.sub.2 Ph.sub.2 ] with a Planar Nitrogen and No Si-N Bond; X-Ray Crystal Structure", J. Chem. Soc., Chem. Comm., 317-318 (1976).
R. M. Fix et al., "Solution-Phase Reactivity as a Guide to the Low-Temperature Chemical Vapor Deposition of Early-Transition-Metal Nitride Thin Films", J. Am. Chem. Soc., 112, 7833-7835 (1990).
R. M. Fix et al., "Synthesis of Thin Films by Atmospheric Pressure Chemical Vapor Deposition Using Amido and Imido Titanium (IV) Compounds as Precursors", Chem. Mater., 2, 235-241 (1990).
V. H. Follner, "Triathanolaminkomplexe. I. Die Kristallstruktur von ZnCl. C.sub.6 H.sub.14 O.sub.3 N", Acta Cryst., B28, 157-160 (1972) (English Language Abstract is included on the first page of the reference).
R. J. Garant et al., "Lewis Basicity of Silatranes and the Molecular Structures of EtOSi(OCH.sub.2 CH.sub.2).sub.3 N, Me.sub.2 O.sup.+ Si(OCH.sub.2 CH.sub.2).sub.3 N, and CF.sub.3 CO.sub.2 HEtOSi(OCH.sub.2 CH.sub.2).sub.3 N", J. Am. Chem. Soc., 113, 5728-5735 (1991).
G. S. Girolami et al., "Organometallic Route to the Chemical Vapor Deposition of Titanium Carbide Films at Exceptionally Low Temperatures", J. Am. Chem. Soc., 109, 1579-1580 (1987).
G. S. Girolami et al., "Tailored Organometallics as Low-Temperature CVD Precursors to Thin Films", Mat. Res. Soc. Symp. Proc., 121, 429-438 (1988).
G. S. Girolami et al., "Low Temperature MOCVD Routes to Thin Films From Transition Metal Precursors", Mat. Res. Soc. Symp. Proc., 168, 319-329 (1990).
W. L. Gladfelter et al., "New Precursors for the Organometallic Chemical Vapor Deposition of Aluminum Nitride", Mat. Res. Soc. Symp. Proc., 131, 447-452 (1989).
R. G. Gordon et al., "Silicon Dimethylamido Complexes and Ammonia as Precursors for the Atmospheric Pressure Chemical Vapor Deposition of Silicon Nitride Thin Films", Chem. Mater., 2, 480-482 (1990).
R. G. Gordon et al., "Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200.degree.-250.degree.C.", J. Mater. Res., 6, 5-7 (1991).
D. Gudat et al., "Novel Properties of New Phosphatranes and Silatranes", Phosphorus, Sulfur and Silica, 41, 21-29 (1989).
D. Gudat et al., "New Azasilatranes: Synthesis and Substitution Reactions", Organometallics, 8, 2772-2779 (1989).
D. Gudat et al., "New Azasilatranes: Sterically Induced Transannular Bond Weakening and Cleavage", J. Am. Chem. Soc., 111, 8520-8522 (1989).
D. Gudat et al., "New Azasilatranes: Bidentate and Tridentate Coordination Modes of the Novel Ligand EtOSi(Ph.sub.2 PNCH.sub.2 CH.sub.2).sub.2 (HNCH.sub.2 CH.sub.2)N", Organometallics, 9, 1464-1470 (1990).
D. Gudat et al., "Azasilatrane Methanolysis Pathways: Stereoelectronic Influences", Organometallics, 9, 2172-2175 (1990).
R. L. Harlow, "
Beck Shrive
Chen Bret
Iowa State University & Research Foundation, Inc.
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