Method of anodic bonding a semiconductor wafer to an insulator

Details Method of anodic bonding a semiconductor wafer to an insulator Method of anodic bonding a semiconductor wafer to an insulator

1990-10-12

1992-08-25

Seidel, Richard K.

Metal fusion bonding

Process

Critical work component, temperature, or pressure

437 21, 437170, 65 40, B23K 35368, H01L 3500

Patent

active

051411482

ABSTRACT:
An anodic bonding method in which a semiconductor wafer and an inorganic insulating material are bonded together includes the steps of forming a first metallic thin film having a strong contact with the inorganic insulating material on one surface of the inorganic insulating material. Then, a second metallic thin film which is stable in air is formed on the first metallic thin film. The inorganic insulating material is placed on the semiconductor wafer so that a surface of the inorganic insulating material opposite the first metallic film is brought into contact with the semiconductor wafer. Then, a DC voltage is applied across the first and second metallic thin films as a cathode and the semiconductor wafer as an anode while the inorganic insulating material and semiconductor wafer are heated. Since the first metallic thin film contacts with the inorganic insulating material strongly and fills all fine gaps, voids can be prevented from occurring in bonded layers. Further, since the second metallic thin film uniformly provides an electric field, uniform bonding can be obtained with high reproducibility.

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Baitinger et al, "Manufacturing High-Frequency Diodes", IBM Tech. Discl. Bulletin, vol. 13, No. 10 Mar. 1971.

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