Method of annealing silicon carbide for activation of ion-implan

Details Method of annealing silicon carbide for activation of ion-implan Method of annealing silicon carbide for activation of ion-implan

1996-06-03

1999-11-09

Paschall, Mark

Electric heating

Metal heating

By arc

219158, 219420, 219421, 21912158, 266242, 373122, 373163, B23K 1000

Patent

active

059819006

ABSTRACT:
A method and crucible for annealing SiC at high temperatures. The crucible is a vessel having a peripheral wall, at least two compartments separated by an inner wall within the peripheral wall and a lid which separates the compartments from the crucible surroundings while providing a passageway between the compartments. The peripheral wall, inner wall and lid are composed of materials capable of withstanding annealing temperatures. The process disposes an SiC wafer in one of the compartments and SiC powder disposed in another of the compartments. The SiC powder is present to hinder SiC wafer decomposition during annealing of the SiC wafer. The crucible is then heated to a temperature sufficient anneal the SiC wafer, preferably after evacuating air and flowing an inert gas in and around the crucible.

REFERENCES:
patent: 2543700 (1951-02-01), Leitten et al.
patent: 4165865 (1979-08-01), Nowak et al.
patent: 4238635 (1980-12-01), Saarivitta et al.
patent: 5236353 (1993-08-01), Adari et al.
patent: 5573591 (1996-11-01), Ikezawa et al.
patent: 5750967 (1998-05-01), Sprauer, Jr.
Sze, S.M., "Semiconductor Devices Physics and Technology", p. 420 (Wiley & ons, New York, 1985).
Bohn, H.G. et al, "Recrystallization of ion-implanted a-SiC", J. Mater. Res. 2 (1), p. 107 (1987).
Ghezzo et al, "Nitrogen-Implanted SiC Diodes Using High-Temperature Implantation", IEEE Electron Device Letters 13 (12), p. 639 (1992).
Flemish, J.R. et al, "Implantation and Activation of Aluminum in 6H-SiC", J. Electrochem.Soc. 142(9), L144 (1995).
G.M. Rosenblatt, J. ELectrochem. Soc. 110, p. 563 (1963).
Grimley, R.T., J. Chem. Phys. 46, 3260 (1967).

Affiliated with

Also associated with

Rating

Method of annealing silicon carbide for activation of ion-implan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of annealing silicon carbide for activation of ion-implan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of annealing silicon carbide for activation of ion-implan will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1459274