Method of annealing silicon carbide for activation of ion-implan

Details Method of annealing silicon carbide for activation of ion-implan Method of annealing silicon carbide for activation of ion-implan

1999-07-19

2000-12-12

Group, Karl

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

264673, 264682, 21912159, 219158, 219420, 373122, 373163, C04B 35569, B23K 1000

Patent

active

061598844

ABSTRACT:
A method and crucible for annealing SiC at high temperatures. The crucible s a vessel having a peripheral wall, at least two compartments separated by an inner wall within the peripheral wall and a lid which separates the compartments from the crucible surroundings while providing a passageway between the compartments. The peripheral wall, inner wall and lid are composed of materials capable of withstanding annealing temperatures. The process disposes an SiC wafer in one of the compartments and SiC powder disposed in another of the compartments. The SiC powder is present to hinder SiC wafer decomposition during annealing of the SiC wafer. The crucible is then heated to a temperature sufficient anneal the SiC wafer, preferably after evacuating air and flowing an inert gas in and around the crucible.

REFERENCES:
patent: 2543700 (1951-02-01), Leitten et al.
patent: 4165865 (1979-08-01), Nowak et al.
patent: 4238635 (1980-12-01), Saarivitta Et Aql
patent: 5236353 (1993-08-01), Adari et al.
patent: 5573591 (1996-11-01), Ikezawa et al.
patent: 5750967 (1998-05-01), Sprauer, Jr.
G.M. Rosenblatt, J. Electrochem. Soc. 110, p. 563 (1963). No Month.
G.M. Rosenblatt, J Electrochem. Soc. 110, p. 563 (1963). no month.
Grimley, R.T., J. Chem. Phys. 46, 3260 (1967). no month.

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