Method of annealing implanted semiconductors by lasers

Details Method of annealing implanted semiconductors by lasers Method of annealing implanted semiconductors by lasers

1979-12-03

1983-01-25

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 219121L, 357 30, 357 91, 427 531, H01L 2126, H01L 21268

Patent

active

043701752

ABSTRACT:
A high power excimer laser emits a pulsed output at a high repetition rate in the ultraviolet wavelength region and a uniform power output across the laser beam. By subjecting doped silicon wafers to the pulsed laser output, epitaxial regrowth of silicon crystals can be induced to repair damage to the silicon crystal structure which normally occurs during implantation of the dopant materials.

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Hess in 1979 IEEE/OSA Conf. on Laser Engineering and Applications, Washington, D.C., May 1979, p. 45.

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