Method of annealing fully-fabricated, radiation damaged semicond

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437174, 437247, 437939, 437942, 437 17, 437 10, 148 4, H01L 21263

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active

050175084

ABSTRACT:
A method and apparatus for annealing devices having radiation induced damage is disclosed. A device is exposed to electron irradiation to induce damage to the active area. The device is then annealed with a rapid thermal anneal at a low temperature. The rapid thermal anneal may, optionally, be followed by a conventional oven or furnace anneal at a temperature of about 300.degree. to 450.degree. C. The method produces devices having improved and well controlled characteristics such as short circuit operating area, power dissipated during switching, and on-state voltage drop.

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