Method of annealing a semiconductor

Details Method of annealing a semiconductor Method of annealing a semiconductor

1993-08-11

1994-10-04

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117 7, C30B 1322

Patent

active

053522915

ABSTRACT:
A process for crystallizing an amorphous semiconductor by irradiating a laser beam thereto, which comprises thermally annealing the amorphous semiconductor prior to the crystallization thereof in vacuum or in an inactive gas atmosphere at a temperature not higher than the crystallization temperature of the amorphous semiconductor, and then irradiating a laser beam to the thermally annealed amorphous semiconductor in vacuum or in an inactive gas atmosphere to crystallize the amorphous semiconductor. The process provides a uniform polycrystalline silicon film having high crystallinity, which has less dependence on the energy density of the laser beam which is irradiated thereto for crystallization, and hence useful for thin film devices such as insulated gate field effect transistors.

REFERENCES:
patent: 4322253 (1982-03-01), Pankove
patent: 4552595 (1985-11-01), Hoga
patent: 4576851 (1986-03-01), Iwamatsu
patent: 4589951 (1986-05-01), Kawamura
patent: 4609407 (1986-09-01), Masao et al.
patent: 4719123 (1988-01-01), Haku et al.

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