Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Reexamination Certificate
2011-06-14
2011-06-14
Nguyen, Hai L (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
C327S419000
Reexamination Certificate
active
07961032
ABSTRACT:
A method of recovering gain in a bipolar transistor includes: providing a bipolar transistor including an emitter, a collector, and a base disposed between junctions at the emitter and the collector; reverse biasing the junction disposed between the emitter and the base with an operational voltage and for an operational time period, so that a current gain β of the transistor is degraded; idling the transistor, and generating a repair current Ibrinto the base, while forward biasing the junction disposed between the emitter and the base with a first repair voltage (VEBR), and while at least partly simultaneously reverse biasing the junction disposed between the collector and the base with a second repair voltage (VCBR), for a repair time period (TR), so that the gain is at least party recovered; wherein VEBR, VCBRand TRhave the proportional relationship: TR∝ (Δβ)2×exp [1/(Tam+Rth×le×VCER)], VCER=VBER+VCBR, and le=β×Ibr, β is the normal current gain of the transistor, Δβ is the target recovery gain of the transistor in percentage, Tam is the ambient temperature in degrees K, Ibris the repair current to the base in μamps, Rth is the self-heating thermal resistance of the transistor in K/W, TRis in seconds. The invention further includes structures for implementing the method.
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Feng Kai Di
Wang Ping-Chuan
Yang Zhijian
Abate Joseph P.
International Business Machines - Corporation
Nguyen Hai L
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