Static information storage and retrieval – Radiant energy – Semiconductive
Patent
1989-02-03
1991-08-06
Bowler, Alyssa H.
Static information storage and retrieval
Radiant energy
Semiconductive
365151, 365118, 250306, 369101, G11C 1134, G11C 1300, G01N 2300, G01N 23225
Patent
active
050383221
ABSTRACT:
A method of and a device for sub-micron deforming a surface (15) is described, for example for the purpose of inscribing information. During scanning of the surface the tip (14) of a scanning tunneling microscrope is held at a constant distance from the surface by means of a negative feedback control loop (18) which is controlled by a tunneling current (It) between the tip and the surface, and for forming a pit (21) in the surface (15). The control loop is deactivated and a tip height drive member (8) is energized by means a control voltage (Vpz) whose amplitude increases as a function of time and which has a predetermined final value, such that the tip is lowered into the material.
REFERENCES:
patent: 4013968 (1977-03-01), Huelsman
patent: 4068218 (1978-01-01), Likuski
patent: 4133097 (1979-01-01), Levinthal
patent: 4575822 (1986-03-01), Quate
patent: 4760567 (1988-07-01), Crewe
patent: 4764818 (1988-08-01), Crew
patent: 4820977 (1989-04-01), Brust
patent: 4831614 (1989-05-01), Duerig et al.
patent: 4868395 (1989-09-01), Kasahara et al.
patent: 4904091 (1990-05-01), Hansma et al.
patent: 4906840 (1990-03-01), Zdeblick et al.
patent: 4939363 (1990-07-01), Bando et al.
J. Vac. Sci. Tech nol. A 6(2) Mar./Apr. 1988 "Surface Modification in the Nanometer Range by the Scanning Tunneling Microscope", by Staufer et al.
IBM J. Res. Develop. vol. 30, No. 5 Sept. 1986 "Surface Modification With the Scanning Tunneling Microscope" by Abraham et al.
Bowler Alyssa H.
Miller Paul R.
U.S. Philips Corporation
LandOfFree
Method of and device for sub-micron processing a surface does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of and device for sub-micron processing a surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of and device for sub-micron processing a surface will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1992468