Method of and device for isolating active areas of a semiconduco

Details Method of and device for isolating active areas of a semiconduco Method of and device for isolating active areas of a semiconduco

1995-03-13

1997-02-18

Dang, Trung

Fishing, trapping, and vermin destroying

H01L 2176

Patent

active

056041497

ABSTRACT:
The semiconductor device comprises in a semiconductor substrate (1) at least one predetermined region (6) of the substrate intended subsequently to form an active area, uncovered on its upper surface and situated between the lateral trenches (7) containing an insulative material including at least one layer of a conformal oxide, the insulative material forming on either side of said uncovered predetermined region of the substrate a boss (16) on the plane upper surface of the device. The height of the boss is less than 1 000 .ANG. and the insulative material can also include planarising oxide.

REFERENCES:
patent: 5459096 (1995-10-01), Venkatesan et al.
IEEE Transactions on Electron Devices, vol. ED-34, No. 12, Dec. 1987, New York, US pp. 2450-2455.

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