Method of and device for implanting ions in a target

Details Method of and device for implanting ions in a target Method of and device for implanting ions in a target

1979-05-07

1981-04-07

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 250397, H01J 3700

Patent

active

042608970

ABSTRACT:
In a method of implanting ions in a target, an ion beam is directed onto the target by means of an electrostatic deflection system where the beam describes a pattern over the target dependent on voltage variations on two mutually perpendicular sets of deflection plates. One of the sets of deflection plates is subjected to a varying voltage difference and the other set of deflection plates is subjected to a constant voltage difference so that the ion beam describes a straight line on the target, while at the end of the beam stroke a fixed voltage difference is superimposed on the plates having a constant voltage difference and the variation in the voltage difference is reversed in the plates having a varying voltage difference in such manner that lines described consecutively by the ion beam are always parallel and are situated at a fixed distance from each other.

REFERENCES:
patent: 3585397 (1971-06-01), Brewer
patent: 3688389 (1972-09-01), Nakanuma et al.
patent: 3864597 (1975-02-01), Trotel
patent: 3956635 (1976-05-01), Chang
patent: 4071765 (1978-01-01), Van Oostrum et al.

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