Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1990-08-30
1992-12-29
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257740, 257915, 428593, H01L 2348
Patent
active
051756080
ABSTRACT:
A thin film forming method and apparatus, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make Ar ions flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to maintain a stable discharge and perform reverse sputter in a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. An aluminum wiring film whose peak value of x-ray diffraction strength at a (111) plane is 150 Kcps or more is possible. Also, a barrier layer having a layered structure of granular and columnar crystals or a mixed structure thereof providing an efficient barrier effect and a large specific resistance is possible.
REFERENCES:
patent: 4792842 (1988-12-01), Honma
patent: 4962414 (1990-10-01), Liou et al.
patent: 4990997 (1991-02-01), Nishida
Itagaki Tatsuo
Koubuchi Yasushi
Miyazaki Kunio
Nihei Masayasu
Onuki Jin
Hille Rolf
Hitachi , Ltd.
Potter Roy
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