Method of and apparatus for sputtering

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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20419215, 20419232, 20429803, 20429806, 20429808, 20429834, C23C 1434

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active

049990969

ABSTRACT:
A thin film forming method and apparatus is provided, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make a fraction of Ar ions to flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to hold stable discharge and reverse sputter at a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. A film whose peak value of x-ray diffraction strength in the (111) plane is 150 Xcps or more is possible. Also, a barrier layer with a layered structure of granular and columnar crystals or a mixed structure thereof and hence with an efficient barrier effect and a large specific resistance is possible.

REFERENCES:
patent: 3761375 (1973-09-01), Pierce et al.
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4336118 (1982-06-01), Patten et al.
patent: 4692230 (1987-09-01), Nihei et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4816126 (1989-03-01), Kamoshida et al.

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