Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused
Patent
1998-01-14
2000-04-25
Bowers, Charles
Semiconductor device manufacturing: process
Gettering of substrate
By layers which are coated, contacted, or diffused
438471, H01L 21322
Patent
active
060543736
ABSTRACT:
A method of removing metallic impurities diffused in a semiconductor substrate, comprising, the semiconductor-substrate-heating step of heating a semiconductor substrate to at least 200.degree. C. or higher and promoting the release and rediffusion of metallic impurities diffused in the semiconductor substrate, and the metallic-impurity-removing step of dissolving the metallic impurities arrived at the surface of the semiconductor substrate with a chemical agent and removing them from the substrate.
REFERENCES:
patent: 3923567 (1975-12-01), Lawrence
patent: 5100501 (1992-03-01), Blumenthal
patent: 5426061 (1995-06-01), Sopori
patent: 5840590 (1998-11-01), Myers, Jr. et al.
Muraoka Hisashi
Takeda Ryuji
Tomita Hiroshi
Berezny Nema
Bowers Charles
Kabushiki Kaisha Toshiba
Purex Co., Ltd.
Toshiba Ceramics Co. Ltd.
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