Method of and apparatus for removing metallic impurities diffuse

Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused

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438471, H01L 21322

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active

060543736

ABSTRACT:
A method of removing metallic impurities diffused in a semiconductor substrate, comprising, the semiconductor-substrate-heating step of heating a semiconductor substrate to at least 200.degree. C. or higher and promoting the release and rediffusion of metallic impurities diffused in the semiconductor substrate, and the metallic-impurity-removing step of dissolving the metallic impurities arrived at the surface of the semiconductor substrate with a chemical agent and removing them from the substrate.

REFERENCES:
patent: 3923567 (1975-12-01), Lawrence
patent: 5100501 (1992-03-01), Blumenthal
patent: 5426061 (1995-06-01), Sopori
patent: 5840590 (1998-11-01), Myers, Jr. et al.

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