Method of and apparatus for producing single-crystalline diamond

Details Method of and apparatus for producing single-crystalline diamond Method of and apparatus for producing single-crystalline diamond

1998-04-15

2000-08-01

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 89, 117 93, 117902, 117913, C30B 2304

Patent

active

060961295

ABSTRACT:
An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.

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Hiromu Shiomi et al.: Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method; 362 Japanese Journal of Applied Physics, 29(1990)Jan., No. 1, Part 1, Tokyo, JP, pp. 34 to 40.
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