Method of and apparatus for producing a thin layer of a material

Details Method of and apparatus for producing a thin layer of a material Method of and apparatus for producing a thin layer of a material

1996-07-19

1997-04-15

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429809, 20429811, 20429812, 20429815, 20429826, C23C 1434

Patent

active

056205767

ABSTRACT:
Coatings on substrates which incorporate reactive gases like oxygen and nitrogen are formed by providing the substrate so that it is spaced from the target region in a coating chamber, forming particles of the coating material by plasma from a cathodic target and entraining the particles to the substrate spaced from the plasma in a gas stream including the reactive gas and at a pressure of 0.1 to 20 mbar.

REFERENCES:
patent: 4049533 (1977-09-01), Golyanov et al.
patent: 4094764 (1978-06-01), Boucher et al.
patent: 4362936 (1982-12-01), Hofmann et al.
patent: 4902671 (1990-02-01), Koinuma e tal.
patent: 4933063 (1990-06-01), Katsura et al.
patent: 4950642 (1990-08-01), Okamoto et al.
patent: 4975168 (1990-12-01), Ohno et al.
patent: 5110435 (1992-05-01), Haberland
patent: 5441623 (1995-08-01), Lin

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