Optics: measuring and testing – By dispersed light spectroscopy – With raman type light scattering
Reexamination Certificate
2007-11-13
2007-11-13
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
By dispersed light spectroscopy
With raman type light scattering
C356S032000
Reexamination Certificate
active
11219550
ABSTRACT:
The present invention provides a method of and a device for measuring the stress in a semiconductor material. An excitation light is irradiated on a semiconductor material formed with a silicon germanium layer and a strained silicon layer in a multilayer structure on a single crystal silicon substrate from the direction of the strained silicon layer. An internal stress of the semiconductor material is measured from peak position information of the Raman spectrum of scattered light from the irradiating point, wherein light having a wavelength capable of reaching the single crystal silicon substrate is used as the excitation light, a temperature of the semiconductor material is estimated from a shift amount of the peak position of the Raman spectrum of the scattered light from the substrate in accordance with the irradiation of the excitation light and the shift amounts of the peak positions of the Raman spectra in the strained silicon layer and in the silicon germanium layer are corrected by means of the estimated temperature, The internal stresses of the strained silicon layer and the silicon germanium layer are calculated from the corrected peak position information of the Raman spectra in the respective layers.
REFERENCES:
patent: 4812036 (1989-03-01), Inoue
patent: 5864393 (1999-01-01), Maris
patent: 5999255 (1999-12-01), Dupee et al.
patent: 2 241 606 (1991-09-01), None
patent: 64-32155 (1989-02-01), None
patent: 3220433 (1999-09-01), None
Hart, et al. “Temperature Dependence of Raman Scattering in Silicon”, Jan. 15, 1970, Physical Review B, vol. 1, No. 2, pp. 638-642.
Katanishi Akihiro
Magari Masaaki
Naka Nobuyuki
Geisel Kara E
Horiba Ltd.
Toatley , Jr. Gregory J.
LandOfFree
Method of and apparatus for measuring stress of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of and apparatus for measuring stress of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of and apparatus for measuring stress of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3828850