Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1991-09-20
1993-08-03
Nguyen, Vinh
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324 96, 324158D, 324 731, G01R 3100
Patent
active
052332918
ABSTRACT:
A method of measuring C-V characteristics of a semiconductor wafer without forming an electrode on an oxide film thereof. An electrode 201 for C-V measurement is held above a semiconductor wafer 100 across a gap Ge of 1 micrometer or less, and a total capacity including that of the gap Ge is detected. The gap Ge is measured by utilizing the tunneling effect observed in total reflection of light wave. Parallelism of the electrode 201 to the wafer is adjusted by measuring the width of the gap or measuring the capacity of the gap at three different locations on the periphery of the electrode 201.
REFERENCES:
patent: 4083254 (1978-04-01), Nissl
patent: 4322979 (1982-04-01), Fromm
patent: 4681451 (1987-07-01), Guerra et al.
patent: 4891584 (1990-01-01), Kamieniecki et al.
patent: 4941753 (1990-07-01), Wickramasinghe
patent: 4992728 (1991-02-01), McCord et al.
patent: 5065103 (1991-11-01), Slinkman et al.
Emil Kamineniecki, J. Appl. Phis. vol. 54, No. 11, pp. 6481-6487, Nov. 1983.
Kouno Motohiro
Nakatani Ikuyoshi
Sakai Takamasa
Dainippon Screen Mfg. Co,. Ltd.
Nguyen Vinh
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