Method of and apparatus for in-situ monitoring of...

Details Method of and apparatus for in-situ monitoring of... Method of and apparatus for in-situ monitoring of...

2006-09-01

2008-03-18

Punnoose, Roy M (Department: 2886)

Optics: measuring and testing

Crystal or gem examination

Reexamination Certificate

active

07345746

ABSTRACT:
In-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. A method is characterized by simultaneously irradiating at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places. Apparatus according to the invention perform such methods.

REFERENCES:
patent: 6303411 (2001-10-01), Camm et al.
patent: 6975386 (2005-12-01), Tsumura et al.
patent: 7130048 (2006-10-01), Takami
patent: WO 02/50875 (2002-06-01), None
Minghong Lee et al., “In situ visualization of interface dynamics during the double laser recrystallization of amorphous silicon thin films”, Journal of Crystal Growth, Mar. 8, 2001, pp. 8-12, vol. 226.

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