Method of and apparatus for evaluating crystal rate in silicon t

Details Method of and apparatus for evaluating crystal rate in silicon t Method of and apparatus for evaluating crystal rate in silicon t

1992-10-23

1994-05-24

Powell, William A.

Fishing, trapping, and vermin destroying

437 7, 196626, H01L 2166

Patent

active

053148312

ABSTRACT:
Light in an ultraviolet region is applied to a first sample of single-crystalline silicon substrate and a sample of silicon thin film to be evaluated respectively, to obtain wavelength dependency of a ratio (reflection intensity ratio) K(.lambda.) between reflection light intensity values of the samples. A straight line connecting points indicating reflection intensity values at wavelengths 235 nm and 320 nm is obtained to subtract an actual reflection intensity ratio Kr from a virtual reflection intensity ratio Ki provided by the straight line with respect to a wavelength of 270 nm, thereby obtaining an index .DELTA.Ks. In a similar manner, an index .DELTA.Ka is obtained as to a second sample of silicon which is composed of only true amorphous phases. The degree of non-crystallization of the silicon thin film to be obtained is evaluated by comparing the index .DELTA.Ks with the index .DELTA.Ka.

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