Method of and apparatus for epitaxially growing chemical compoun

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

117 86, 117 89, 117105, 117108, C30B 2516

Patent

active

054639778

ABSTRACT:
In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

REFERENCES:
patent: 3915765 (1975-10-01), Cho et al.
patent: 4159919 (1979-07-01), McFee et al.
patent: 4383872 (1983-05-01), Roberts
patent: 4525376 (1985-06-01), Edgerton
patent: 4575462 (1986-03-01), Dobson et al.
patent: 4812650 (1989-03-01), Eckstein et al.
patent: 4931132 (1990-06-01), Aspnes
patent: 5091320 (1992-02-01), Aspnes
Journal of the Electrochemical Society vol. 121, No. 9 Sep. 1974 pp. 1233-1237 Sugawara et al "In situ Monitoring of Film Deposition Using HE-NE Laser System".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of and apparatus for epitaxially growing chemical compoun does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of and apparatus for epitaxially growing chemical compoun, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of and apparatus for epitaxially growing chemical compoun will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-191758

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.