Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1993-07-15
1995-11-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117 86, 117 89, 117105, 117108, C30B 2516
Patent
active
054639778
ABSTRACT:
In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.
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Journal of the Electrochemical Society vol. 121, No. 9 Sep. 1974 pp. 1233-1237 Sugawara et al "In situ Monitoring of Film Deposition Using HE-NE Laser System".
Ito Junji
Kurabayashi Toru
Manada Nobuaki
Nishizawa Jun-ichi
Kunemund Robert
Kurabayashi Toru
Manada Nobuaki
Nishizawa Jun-Ichi
Research Development Corporation
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