Method of and apparatus for controlling floating zone of semicon

Details Method of and apparatus for controlling floating zone of semicon Method of and apparatus for controlling floating zone of semicon

1987-12-11

1989-09-12

Pellinen, A. D.

Electric heating

Metal heating

Of cylinders

219 1077, 373139, 156615, 1566171, 364477, 382 8, H05B 500, H05B 508

Patent

active

048662305

ABSTRACT:
In a method of controlling a floating zone of a semiconductor rod of the present invention shown in FIG. 1, the diameter D.sub.s at a crystallization boundary of a crystal and the axial length of the floating zone are indirectly controlled by controlling a diameter D.sub.m of a crystallizing-side melt shoulder portion and the diameter D.sub.n of a constricted melt portion, respectively. Since these diameters D.sub.m and D.sub.n are used for predicting D.sub.s and L to be obtained after a given time has passed, the response speed and stability of the control are improved as compared with the direct control of D.sub.s and L. An apparatus for controlling a floating zone of a semiconductor rod of the present invention performs the above-described method. In another method, the zone length is directly or indirectly controlled by regulating a relative moving speed of the melting-side semiconductor rod relative to the heater, and the diameter D.sub.s at the crystallization boundary of the crystal is directly or indirectly controlled by regulating the electrical power supplied to the heater.

REFERENCES:
patent: 2992311 (1961-07-01), Keller
patent: 3198929 (1965-08-01), Stut
patent: 3243509 (1966-04-01), Stut
patent: 3757071 (1973-09-01), Stut
patent: 3814827 (1974-06-01), Stut
patent: 4162367 (1979-07-01), Ticak et al.

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