Method of and apparatus for chemical mechanical polishing...

Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...

Reexamination Certificate

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C156S345130

Reexamination Certificate

active

06929755

ABSTRACT:
The distribution and size distribution of polishing particles contained in a slurry to be supplied to a polishing unit are measured by a measuring machine. Polishing speed with respect to a wafer is controlled to be constant by controlling a physical quantity such as the rotation speed of a polishing surface plate, the rotation speed of a polishing head or the pressurizing force of the polishing head based on the measurement result.

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patent: 5791970 (1998-08-01), Yueh
patent: 5865665 (1999-02-01), Yueh
patent: 6117779 (2000-09-01), Shelton et al.
patent: 7-40246 (1995-02-01), None
patent: 2000-71172 (2000-03-01), None
patent: 2000-190223 (2000-07-01), None
patent: 2000-308967 (2000-11-01), None

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