Method of and an apparatus for setting up parameters which are u

Details Method of and an apparatus for setting up parameters which are u Method of and an apparatus for setting up parameters which are u

1992-12-15

1996-03-26

Trans, Vincent N.

Boots, shoes, and leggings

364578, G06F 1750

Patent

active

055026435

ABSTRACT:
Improved setup of process parameters for manufacturing of a semiconductor device is disclosed. Using parameters which are necessary for attaining a threshold voltage of a semiconductor device, process simulation is performed to thereby compute the threshold voltage. Whether the computed threshold voltage has a predetermined value is then judged. The parameters are updated until the predetermined value is reached. The simulation involves partitioning the semiconductor device into fine discrete cells. A boundary region is defined which delineates neighboring cells. Since a range of the boundary region is considered in the simulation, prediction of impurity concentration is accurate.

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Journal of the Electrochemical Society, Dec. 1978, pp. 2050-2058, Richard B. Fair, et al., "Theory and Direct Measurement of Boron Segregation in SiO.sub.2 During, Near Dry and Wet O.sub.2 Oxidation".
Journal of the Electrochemical Society, May 1978, pp. 813-819, Dimitri A. Antoniadis, et al., "Boron in Near-Intrinsic <100> and <111> Silicon Under Inert and Oxidizing Ambients-Diffusion and Segregation".
Journal of the Electrochemical Society, Nov. 1979, pp. 1939-1945, D. A. Antoniadis, et al., "Impurity Redistribution in SiO.sub.2 -Si During Oxidation: A Numerical Solution Including Interfacial Fluxes".

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