Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1999-02-19
1999-09-07
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
H01J 37302
Patent
active
059490799
ABSTRACT:
A method and an apparatus for electron beam exposure convenient to be applied to the hybrid exposure of a pattern with ultra-fine design rules, a method of electron beam exposure comprises: a primary field dividing step (S2) for dividing a second pattern to be drawn into a plurality of fields having a size whereon an electron beam can be radiated with negligible biasing distortion; a primary fitting step for performing a fitting process (S3) for each of the plurality of fields, wherein cubic compensation equations are adjusted to fit compensation values with the optical distortion, and a fitting error after compensation being calculated; a primary field dividing step for performing a field dividing process (S5) for each of the plurality of fields whereof the fitting error is larger than a predetermined allowable range, wherein a concerning field is divided into a pair of sub fields and the fitting process is performed for each of the sub fields; and a sub field dividing step for repeating the field dividing process for each of the sub fields, the fitting error thereof larger than the predetermined allowable range and a size thereof larger than a predetermine minimum size.
REFERENCES:
patent: 5051598 (1991-09-01), Ashton et al.
NEC Corporation
Nguyen Kiet T.
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