Method of analyzing localized nonuniformities in luminescing mat

Details Method of analyzing localized nonuniformities in luminescing mat Method of analyzing localized nonuniformities in luminescing mat

1979-09-05

1980-12-09

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250310, 250312, A61K 2702

Patent

active

042386861

ABSTRACT:
Localized nonuniformities in semiconductor crystals are analyzed by scanning the semiconductor surface with an electron beam and detecting and analyzing the radiation that is generated at the semiconductor surface by the electron beam and which passes through the semiconductor crystal.

REFERENCES:
patent: 3767304 (1973-10-01), Keenan et al.
patent: 4008402 (1977-02-01), O'Keeffe

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