Method of analyzing impurities in the surface of a semiconductor

Details Method of analyzing impurities in the surface of a semiconductor Method of analyzing impurities in the surface of a semiconductor

1994-12-20

1996-06-18

Snay, Jeffrey R.

Chemistry: analytical and immunological testing

Silicon containing

436 73, 436172, 436180, 2504922, 378 45, G01N 23223

Patent

active

055277071

ABSTRACT:
A silicon wafer is placed in an atmosphere of hydro-fluoric acid vapor, dissolving an oxide film formed on a surface of the wafer and forming solution drops containing impurities. A Teflon plate is put on the surface of the silicon wafer, such that its hydrophilic surface is set in contact with the HF solution drops. The drops are transferred to the hydrophilic surface of the Teflon plate. Fluorescent X rays are applied to the hydrophilic surface of the Teflon plate and totally reflected the hydrophilic surface. The energy peaks of the impurities, including aluminum whose energy peak is similar to that of silicon, are detected from the fluorescent X rays totally reflected. Also, the distribution of the impurities in the surface of the wafer are determined from the fluorescent X rays.

REFERENCES:
patent: 4584886 (1986-04-01), Matsunaga et al.
patent: 5006382 (1991-04-01), Squire
patent: 5148457 (1992-09-01), Kubota et al.
patent: 5305366 (1994-04-01), Nakahara et al.
patent: 5476006 (1995-12-01), Jujii et al.
Watanabe et al. AN 1994:123797 HCAPLUS.
Ariga et al. AN 1991:220389 HCAPLUS.
Taguchi, S. et al. AN 1995:339100 HCAPLUS.
Rapsomanikis, et al, AN 1988: 460533 HCAPLUS.
Pietsch et al.; AN 1994:228076 HCAPLUS.

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