Method of analyzing failure of semiconductor device by using emi

Details Method of analyzing failure of semiconductor device by using emi Method of analyzing failure of semiconductor device by using emi

1996-12-17

1998-06-02

Nelms, David C.

Optics: measuring and testing

Inspection of flaws or impurities

Having predetermined light transmission regions

356 71, 356429, 356388, 356390, G01N 2100

Patent

active

057608920

ABSTRACT:
A method of analyzing a failure of semiconductor device by using an emission microscope for easy analysis of current leakage is disclosed. Light emission information is stored in X/Y memory spaces (16), with a Z direction indicating an emitted light intensity. A light emission presence bit (17) in the light emission information means a bit for which light emission is judged as being present, and the number of light emission presence bits is determined on the basis of the emitted light intensity. An image memory (11) has a three-dimensional memory space including an X/Y space indicative of plane positions of light emitting portions and a Z space indicative of the emitted light intensity. The position and intensity of light emission are detected by searching the light emission information stored in the image memory (11) to analyze the failure.

REFERENCES:
patent: 5301006 (1994-04-01), Bruce
patent: 5377003 (1994-12-01), Lewis et al.
Kiyoshi Nikawa, "Failure Analysis on Si Device Chips", IEICE Transactions on Electronics, (pp. 528-534), vol. E77-C, No. 4, Apr. 1994.
S. Ishikasa, et al., "Yield Enhancement by FBM analysis system", Reference for the Research by Gakushin 132 commitee, (pp. 1-6), Nov., 1995.

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