Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1990-08-02
1993-08-31
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118724, 118725, C23C 1600
Patent
active
052405052
ABSTRACT:
A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.
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"A Mechanism for Selectivity Loss During Tungsten CVD" by J. R. Creighton, "J. Electrochemical Society", vol. 136, No. 1, pp. 271-275, Jan. 1989.
Itoh Hiromi
Iwasaki Masanobu
Bueker Richard
Mitsubishi Denki & Kabushiki Kaisha
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