Method of alternating grounded/floating poly lines to...

Details Method of alternating grounded/floating poly lines to... Method of alternating grounded/floating poly lines to...

2005-02-22

2005-02-22

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

C438S078000, C365S071000

Reexamination Certificate

active

06858450

ABSTRACT:
A method for in-line testing of a chip to include multiple independent bit Flash memory devices, includes the steps of: grounding every other polysilicon line on the chip to emulate the multiple independent bit Flash memory devices, where an oxide line reside between every two polysilicon lines; scanning the polysilicon lines with an electron beam; examining voltage contrasts between the polysilicon lines; and determining if there are consecutively grounded polysilicon lines based on the voltage contrasts. If consecutive polysilicon lines appear to be grounded, then this indicates that a bridge defect exists between two of the consecutively grounded polysilicon lines. With this method, bridge defects in multiple independent bit Flash memory devices are better detected, leading to improved yield and reliability of the devices.

REFERENCES:
patent: 6310798 (2001-10-01), Morimoto

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