Method of alloying an interconnect structure with copper

Details Method of alloying an interconnect structure with copper Method of alloying an interconnect structure with copper

1996-05-20

1997-10-14

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437194, H01L 21441

Patent

active

056772440

ABSTRACT:
An interconnect structure (10) is formed by filling a dual damascene structure (12) with conductive material. A barrier layer (13) is formed to serve as a seed layer and to prevent the out-diffusion of copper. A discontinuous film (30) of islands (41) is used to dope the interconnect structure (10)with copper. A conductive layer (14) is formed to fill a first portion (21) and a second portion (22) of the damascene structure (12). An anneal step is performed to diffuse the copper into the conductive layer (14).

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S.M. Fine, et al. "Consecutive Selective Chem. Vap. Dep. of Copper and Aluminum From Organometallic Precursors" Chem. Perspectives of Microelectronic Materials III Symp. (Mater. Res. Soc. 1993) pp. 329-334.

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