Method of alignment for buried structures formed by surface...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S068000, C438S113000, C438S401000, C438S458000, C438S462000, C438S620000, C438S666000, C438S667000, C438S975000, C257S773000, C257S775000, C257S776000, C257S797000, C257S920000

Reexamination Certificate

active

06841408

ABSTRACT:
A method of aligning a plurality of empty-spaced buried patterns formed in semiconductor monocrystalline substrates is disclosed. In an exemplary embodiment, high-temperature metal marks are formed to include a conductive material having a melting temperature higher than an annealing temperature used to form such empty-spaced buried patterns. The high-temperature metal marks are formed prior to the formation of the empty-spaced buried patterns formed in a monocrystalline substrate, so that the empty-space buried patterns are aligned to the marks. Subsequent semiconductor structures that are formed as part of desired semiconductor devices can be also aligned to the marks.

REFERENCES:
patent: 5538819 (1996-07-01), DeMarco et al.
patent: 5712189 (1998-01-01), Plumton et al.
patent: 5747842 (1998-05-01), Plumton
patent: 5889298 (1999-03-01), Plumton et al.
patent: 5920121 (1999-07-01), Forbes et al.
patent: 5937286 (1999-08-01), Abiko
patent: 5943581 (1999-08-01), Lu et al.
patent: 6025261 (2000-02-01), Farrar et al.
patent: 6054361 (2000-04-01), Tan et al.
patent: 6060786 (2000-05-01), Wang
patent: 6080635 (2000-06-01), Jang et al.
patent: 6081040 (2000-06-01), Okuda et al.
patent: 6093640 (2000-07-01), Hsu et al.
patent: 6100176 (2000-08-01), Forbes et al.
patent: 6121126 (2000-09-01), Ahn et al.
patent: 6133111 (2000-10-01), Sur et al.
patent: 6136662 (2000-10-01), Allman et al.
patent: 6157087 (2000-12-01), Zhao et al.
patent: 6215197 (2001-04-01), Iwamatsu
patent: 6303460 (2001-10-01), Iwamatsu
patent: 6303472 (2001-10-01), Queirolo et al.
patent: 6350680 (2002-02-01), Shih et al.
patent: 6352904 (2002-03-01), Tan et al.
patent: 6352909 (2002-03-01), Usenko
patent: 6417072 (2002-07-01), Coronel et al.
patent: 6462428 (2002-10-01), Iwamatsu
patent: 6576529 (2003-06-01), Boulin et al.
patent: 6667221 (2003-12-01), Kitazawa et al.
patent: 6740564 (2004-05-01), Kamoshima et al.
patent: 20020005594 (2002-01-01), Iwamatsu
patent: 20020072195 (2002-06-01), Anma et al.
patent: 20030042627 (2003-03-01), Farrar et al.
patent: 20030102576 (2003-06-01), Teramoto
F.A. Nichols, et al.—“Surface- (Interface-) and Volume-Diffusion Contributions to Morphological Changes Driven by Capillarity,” Transactions of the Metallurgical Society of AIME, vol. 233, Oct. 1965, pp. 1840-1848.
Tsutomu Sato, et al.—“A New Substrate Engineering for the Formation of Empty Space in Silicon (ESS) Induced by Silicon Surface Migration,” IEEE 1999, pp. 517-520.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of alignment for buried structures formed by surface... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of alignment for buried structures formed by surface..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of alignment for buried structures formed by surface... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3382183

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.