Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2005-01-11
2005-01-11
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S068000, C438S113000, C438S401000, C438S458000, C438S462000, C438S620000, C438S666000, C438S667000, C438S975000, C257S773000, C257S775000, C257S776000, C257S797000, C257S920000
Reexamination Certificate
active
06841408
ABSTRACT:
A method of aligning a plurality of empty-spaced buried patterns formed in semiconductor monocrystalline substrates is disclosed. In an exemplary embodiment, high-temperature metal marks are formed to include a conductive material having a melting temperature higher than an annealing temperature used to form such empty-spaced buried patterns. The high-temperature metal marks are formed prior to the formation of the empty-spaced buried patterns formed in a monocrystalline substrate, so that the empty-space buried patterns are aligned to the marks. Subsequent semiconductor structures that are formed as part of desired semiconductor devices can be also aligned to the marks.
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Farrar Paul A.
Geusic Joseph E.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Gurley Lynne A.
Micro)n Technology, Inc.
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