Method of alignment between mask and semiconductor wafer

Details Method of alignment between mask and semiconductor wafer Method of alignment between mask and semiconductor wafer

1988-01-19

1989-03-28

Willis, Davis L.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356363, 356401, G01B 902

Patent

active

048158542

ABSTRACT:
A method of alignment between a mask and a semiconductor wafer is disclosed. At least one linear Fresnel zone plate lens is provided on the mask, and first and second reflecting gratings are provided one the semiconductor wafer. The first reflecting grating includes a plurality of concaves or convexs arranged with a constant pitch P.sub.1, and the second reflecting grating includes a plurality of concaves of convexs arranged with a constant pitch P.sub.2 different from the pitch P.sub.1 in the first reflecting grating. A monochromatic radiation is irradiated on the mask and first and second reflected radiations from the first and second reflecting gratings are detected by first and second detectors, respectively. A difference value between the outputs of the first and second detectors is obtained, and the relative position between the mask and the semiconductor wafer is displaced in accordance with the difference value.

REFERENCES:
patent: 4200395 (1980-04-01), Smith et al.
patent: 4405238 (1983-09-01), Grobman et al.
patent: 4704033 (1987-11-01), Fay et al.
B. Fay et al., "Optical Alignment System for Submicron X-ray Lithography," J. Vac. Sci. Technol., 16(6), Nov./Dec. 1979, pp. 1954-1958.

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